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| 型號(hào)： | TISP820XM |
| 廠商： | Bourns Inc. |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | 互補(bǔ)緩沖，門沙特遙感中心的雙極用戶接口過(guò)電壓保護(hù) |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | TISP820XM |
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MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings for TISP8200M, TA = 25
°
C (Unless Otherwise Noted)
TISP8200M & TISP8201M
Description (Continued)
Negative overvoltages are initially clipped close to the SLIC negative supply by emitter follower action of the NPN buffer transistor. If sufficient
clipping current flows, the SCR will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the high holding
current of the SCR prevents d.c. latchup.
The TISP8201M has an array of two buffered N-gate SCRs with a common cathode connection. Each SCR anode and gate has a separate
terminal connection. The PNP buffer transistors reduce the gate supply current.
In use, the anodes of the TISP8201M SCRs are connected to the two conductors of the POTS line (see applications information). The gates
are connected to the appropriate positive voltage battery feed of the SLIC driving that line pair. This ensures that the TISP8201M protection
voltage tracks the SLIC positive supply voltage. The cathode of the TISP8201M is connected to the SLIC common.
Positive overvoltages are initially clipped close to the SLIC positive supply by emitter follower action of the PNP buffer transistor. If sufficient
clipping current flows, the SCR will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the SLIC pulls
the conductor voltage down to its normal negative value and this commutates the conducting SCR into a reverse biassed condition.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, TISP8200M V
GK
= 0
Repetitive peak reverse voltage, V
GA
= -70 V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
V
DRM
V
RRM
-120
V
120
V
I
TSP
A
10/1000
μ
s (Telcordia/Bellcore GR-1089-CORE, Issue 2, February 1999, Section 4)
-45
5/310
μ
s (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700
μ
s)
-70
2/10
μ
s (Telcordia/Bellcore GR-1089-CORE, Issue 2, February 1999, Section 4)
-210
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1, 2 and 3)
I
TSM
A
100 ms
1 s
5 s
300 s
900 s
-11
-6.5
-3.4
-1.4
-1.3
Non-repetitive peak gate current, 2/10
μ
s pulse, cathode commoned (see Note 1)
I
GSM
T
J
T
stg
10
A
Junction temperature
-55 to +150
°
C
Storage temperature range
-65 to +150
°
C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40
°
C
≤
T
J
≤
85
°
C. The surge may be repeated after the device returns
to its initial conditions.
2. These non-repetitive rated currents are peak values. The rated current values may be applied to any cathode-anode terminal pair.
Above 85
°
C, derate linearly to zero at 150
°
C lead temperature.
3. These non-repetitive rated terminal currents are for the TISP8200M and TISP8201M together. Device (A) terminal positive current
values are conducted by the TISP8201M and (K) terminal negative current values by the TISP8200M.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8210MDR-S | 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8211MDR-S | 功能描述:SCR +20mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8250D | 制造商:Bourns Inc 功能描述: |
| TISP8250DR | 制造商:Bourns Inc 功能描述: |
| TISP8250DR-S | 功能描述:SCR PROTECTOR - GATED UNIDIRECTIONAL RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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