- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄382590 > TISP8201MDR (BOURNS INC) COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION PDF資料下載
參數(shù)資料
| 型號(hào)： | TISP8201MDR |
| 廠商： | BOURNS INC |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, MS-012, SO-8 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | TISP8201MDR |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
SLIC Parameter Values
The table below shows some details of currently available SLICs using positive and negative supply rails.
Manufacturer
INFINEON
LEGERITY
Unit
SLIC SERIES
SLIC-S
SLIC-E
ISLIC
SLIC #
PEB4264
PEB 4265
79R251
Data Sheet Issue
14/07/2000
14/07/2000
-/08/2000
Short Circuit Current
±
130
±
130
±
150
mA
V
BATH
max.
V
BATR
max.
V
BATR
-V
BATH
max.
AC Ringing for:
-70
-90
-85
V
+50
+90
+85
V
90
160
150
V
45
85
65
V rms
V
BATH
V
BATR
-54
-70
-68
V
+36
+80
+52
V
V
BATR
-V
BATH
90
150
120
V
R or T Power Max. < 10 ms
TBA
10
W
R or T Overshoot < 10 ms
-5
5
V
R or T Overshoot < 1 ms
-10
+10
-10
+10
V
R or T Overshoot < 10
μ
s
-10
+30
-10
+30
V
R or T Overshoot < 1
μ
s
-10
10
V
R or T Overshoot < 250 ns
-15
15
V
Line Feed Resistance
20 + 30
20 + 30
50
Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD’s Communication Products Division).
Other product names used in this publication are for identification purposes only and may be trademarks of their respective
companies.
The maximum total voltage, VBATR - VBATH, is normally about 10 % less than the sum of the maximum VBATR and maximum VBATH values.
In terms of voltage overshoot,
±
10 V is needed for 1
μ
s and
±
15 V for 250 ns. It is important to define the protector overshoot under actual
circuit conditions. For example, if the series line feed resistor was 20
, R1 in Figure 10, and Telcordia GR-1089-CORE 2/10 and 10/1000 first
level impulses were applied, the peak protector currents would be 100 A and 33 A. Therefore, the protector voltage overshoot should be
measured at 100 A, 2/10 and 33 A, 10/1000.
Using the table values for maximum battery voltage and minimum overshoot gives a requirement of
±
105 V from the output to ground and
±
175 V between outputs. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover
down to -40
°
C, the 25
°
C protector minimum values become
±
120 V referenced to ground,
±
190 V between outputs and 100 V or -100 V on
the gate.
Operation of Gated Protectors
Figure 5 shows how the TISP8200M and TISP8201M limit overvoltages. The TISP8200M SCR sections limit negative overvoltages and the
TISP8201M SCR sections limit positive overvoltages.
The TISP8200M (buffered) gate is connected to the negative SLIC battery feed voltage (VBATH) to provide the protection reference voltage.
Negative overvoltages are initially clipped close to the SLIC negative supply rail value (VBATH) by the conduction of the TISP8200M transistor
base-emitter and the SCR gate-cathode junctions. If sufficient current is available from the overvoltage, then the SCR will crowbar into a low
voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the SCR prevents d.c. latchup with the
SLIC output current.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP820XM | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP8210MDR-S | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP8211MDR-S | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP821XMD | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP9110LDM | INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8201MDR-S | 功能描述:SCR PROTECTOR - BUFFERED N-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8210MDR-S | 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8211MDR-S | 功能描述:SCR +20mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8250D | 制造商:Bourns Inc 功能描述: |
| TISP8250DR | 制造商:Bourns Inc 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。