參數(shù)資料
型號: TISP7XXXF3
廠商: Bourns Inc.
英文描述: MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 介質(zhì)
文件頁數(shù): 3/19頁
文件大?。?/td> 562K
代理商: TISP7XXXF3
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for all Terminal Pairs, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
Min
Typ
Max
Unit
I
DRM
V
D
= V
DRM
, 0
°
C < T
A
< 70
°
C
±
10
μ
A
V
(BO)
Breakover voltage
dv/dt =
±
250 V/ms,
R
SOURCE
= 300
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
±
125
±
150
±
180
±
240
±
260
±
290
±
320
±
350
±
380
±
143
±
168
±
198
±
269
±
289
±
319
±
349
±
379
±
409
±
0.8
±
5
V
V
(BO)
Impulse breakover
voltage
dv/dt
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
20 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±
250 V/ms,
I
T
=
±
5 A, t
W
= 100
μ
s
I
T
=
±
5 A, di/dt = - /+30 mA/ms
R
SOURCE
= 300
±
0.1
A
V
A
±
0.15
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±
5
kV/
μ
s
I
D
V
D
=
±
50 V
f = 1 MHz,
±
10
48
41
52
44
47
39
40
31
23
17
18
13
27
23
μ
A
C
off
Off-state capacitance
V
d
= 1 V rms, V
D
= 0
f = 1 MHz,
V
d
= 1 V rms, V
D
= -1 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -2 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -5 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -50 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -100 V
f = 1 MHz,
(see Note 4)
V
d
= 1 V rms, V
DTR
= 0
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
37
31
40
34
36
30
31
24
17
13
14
10
20
17
pF
NOTE
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V
D
, are
for the R-G and T-G terminals only. The last capacitance value, with bias V
DTR
, is for the T-R terminals.
Thermal Characteristics
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
160
Unit
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25
°
C
5 cm
2
, FR4 PCB
D Package
°
C/W
SL Package
135
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