參數資料
型號: TISP7320F3
廠商: Power Innovations International, Inc.
英文描述: TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 三重雙向可控硅過電壓保護器
文件頁數: 3/25頁
文件大小: 489K
代理商: TISP7320F3
3
MARCH 1994 - REVISED MARCH 2000
TISP7125F3,TISP7150F3,TISP7180F3,TISP7240F3,TISP7260F3,
TISP7290F3,TISP7320F3,TISP7350F3,TISP7380F3
TRIPLEBIDIRECTIONALTHYRISTOROVERVOLTAGEPROTECTORS
P R O D U C T I N F O R M A T I O N
electrical characteristics for all terminal pairs, T
A
= 25 °C (unless otherwise noted)
PARAMETER
Repetitive peak off-
state current
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
V
D
= V
DRM
, 0 °C < T
A
< 70 °C
±10
μA
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
R
SOURCE
= 300
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
±125
±150
±180
±240
±260
±290
±320
±350
±380
±143
±168
±198
±269
±289
±319
±349
±379
±409
±0.8
±5
V
V
(BO)
Impulse breakover
voltage
dv/dt
±1000 V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms,
I
T
= ±5 A, t
W
= 100 μs
I
T
= ±5 A, di/dt = +/-30 mA/ms
R
SOURCE
= 300
±0.1
A
V
A
±0.15
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5
kV/μs
I
D
V
D
= ±50 V
f = 1 MHz,
±10
48
41
52
44
47
39
40
31
23
17
18
13
27
23
μA
C
off
Off-state capacitance
V
d
= 1 V rms, V
D
= 0
f = 1 MHz,
V
d
= 1 V rms, V
D
= -1 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -2 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -5 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -50 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -100 V
f = 1 MHz,
(see Note 4)
V
d
= 1 V rms, V
DTR
= 0
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
37
31
40
34
36
30
31
24
17
13
14
10
20
17
pF
NOTE
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V
D
, are
for the R-G and T-G terminals only. The last capacitance value, with bias V
DTR
, is for the T-R terminals.
相關PDF資料
PDF描述
TISP7125F3DR TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP7150F3 TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP7150F3P TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP7240F3 TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP7260F3 TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
相關代理商/技術參數
參數描述
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TISP7320F3D-S 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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