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參數(shù)資料
| 型號(hào)： | TISP7290H3SLL |
| 廠(chǎng)商： | BOURNS INC |
| 元件分類(lèi)： | 浪涌電流限制器 |
| 英文描述： | 290 V, 60 A, SILICON SURGE PROTECTOR |
| 封裝： | SIP-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | TISP7290H3SLL |
FEBRUARY 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP7290H3SLL Overvoltage Protector
Electrical Characteristics for any Terminal Pair, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage (see Note 1)
VDRM
±230
V
Non-repetitive peak impulse current (see Notes 2 and 3)
2/10 s (GR-1089-CORE, 2/10 s voltage wave shape)
8/20 s (IEC 61000-4-5, 1.2/50 s voltage wave shape, 8/20 current combination wave generator)
10/160 s (TIA-968-A, 10/160 s voltage wave shape)
4/250 s (ITU-T K.20/21, 10/700 s voltage waveshape, dual)
0.2/310 s (CNET I 31-24, 0.5/700 s voltage waveshape)
5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape, single)
5/320 s (TIA-968-A, 9/720 s voltage wave shape)
10/560 s (TIA-968-A, 10/560 s voltage wave shape)
10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape)
IPPSM
±500
±350
±250
±225
±200
±130
±100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
ITSM
55
60
0.9
A
20 ms, 50 Hz (full sine wave)
16.7 ms 60 Hz (full sine wave)
1000 s, 50 Hz a.c.
Initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 A
diT/dt
400
A/s
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
NOTES: 1. Derate value at -0.13 %/°C for ambient temperatures below 25 °C.
2. Initially the device must be in thermal equilibrium with TJ = 25 °C.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to any terminal pair.
Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return
current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the device returns to its
initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient tempeartures above 25 °C.
Parameter
Test Conditions
Min Typ Max Unit
IDRM
Repetitive peak off-state current
VD = VDRM
TA = 25 °C
TA = 85 °C
±5
±10
A
V(BO)
Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300
±290
V
V(BO)
Impulse breakover voltage
dv/dt ≤ ±1000 V/s, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/s, Linear current ramp,
Maximum ramp value = ±10 A
±302
V
I(BO)
Breakover current
dv/dt = ±750 V/ms, RSOURCE = 300
±100
±800
mA
VT
On-state voltage
IT = ±5A, tw = 100 s
±5V
IH
Holding current
IT = ±5 A, di/dt = ±30 mA/ms
±150
±600
mA
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM
±5kV/s
ID
Off-state current
VD = ±50 V
TA = 85 °C
±10
A
CO
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = 0 V
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
84
67
62
28
26
pF
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