參數(shù)資料
型號(hào)： TISP7290F3
廠商： Power Innovations International, Inc.
英文描述： TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述： 三重雙向可控硅過(guò)電壓保護(hù)器
文件頁(yè)數(shù)： 18/25頁(yè)
文件大?。?/td> 489K
代理商： TISP7290F3
TISP7125F3,TISP7150F3,TISP7180F3,TISP7240F3,TISP7260F3,
TISP7290F3,TISP7320F3,TISP7350F3,TISP7380F3
TRIPLEBIDIRECTIONALTHYRISTOROVERVOLTAGEPROTECTORS
MARCH 1994 - REVISED MARCH 2000
18
P R O D U C T I N F O R M A T I O N
If the impulse generator current exceeds the protectors current rating then a series resistance can be used to
reduce the current to the protectors rated value and so prevent possible failure. The required value of series
resistance for a given waveform is given by the following calculations. First, the minimum total circuit
impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The
impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then
subtracted from the minimum total circuit impedance to give the required value of series resistance. In some
cases the equipment will require verification over a temperature range. By using the derated waveform values
from the thermal information section, the appropriate series resistor value can be calculated for ambient
temperatures in the range of 0 °C to 70 °C.
protection voltage
The protection voltage, (V
(BO)
), increases under lightning surge conditions due to thyristor regeneration. This
increase is dependent on the rate of current rise, di/dt, when the TISP
is clamping the voltage in its
breakdown region. The V
(BO)
value under surge conditions can be estimated by multiplying the 50 Hz rate
V
(BO)
(250 V/ms) value by the normalised increase at the surge’s di/dt. An estimate of the di/dt can be made
from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/μs, but,
as the rise is exponential, the initial dv/dt is three times higher, being 450 V/μs. The instantaneous generator
output resistance is 25
. If the equipment has an additional series resistance of 20
, the total series
resistance becomes 45
. The maximum di/dt then can be estimated as 450/45 = 10 A/μs. In practice the
measured
di/dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP
breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP
is sensitive to junction temperature, T
J
, and the bias voltage,
comprising of the dc voltage, V
D
, and the ac voltage, V
d
. All the capacitance values in this data sheet are
measured with an ac voltage of 1 V rms. When V
D
>> V
d
the capacitance value is independent on the value
of V
d
. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective
capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of
10 cm could create a circuit resonance with the device capacitance in the region of 80 MHz.
STANDARD
PEAK VOLTAGE
SETTING
V
2500
1000
1500
800
1000
1500
1500
1500
1000
1500
4000
4000
VOLTAGE
WAVE FORM
μs
2/10
10/1000
10/160
10/560
9/720
(SINGLE)
(DUAL)
0.5/700
10/700
(SINGLE)
(SINGLE)
(DUAL)
PEAK CURRENT
VALUE
A
2 x 500
2 x 100
200
100
25
37.5
2 x 27
37.5
25
37.5
100
2 x 72
CURRENT
WAVE FORM
μs
2/10
10/1000
10/160
10/560
5/320
5/320
4/250
0.2/310
5/310
5/310
5/310
4/250
TISP7xxxF3
25 °C RATING
A
2 x 190
2 x 45
110
50
70
70
2 x 95
70
70
70
70
2 x 95
SERIES
RESISTANCE
COORDINATION
RESISTANCE
(MIN.)
GR-1089-CORE
12
NA
FCC Part 68
(March 1998)
6
8
NA
0
I 31-24
0
0
0
17
0
NA
NA
NA
6
6
ITU-T K20/K21
FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
NA = Not Applicable, primary protection removed or not specified.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP7290F3D 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP7290F3DR 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP7290F3DR-S 功能描述:硅對(duì)稱二端開關(guān)元件 BI-DIRECTIONL PRTCTR 220volts RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP7290F3DS 制造商:Bourns Inc 功能描述:
TISP7290F3D-S 功能描述:硅對(duì)稱二端開關(guān)元件 TRIPLE ELEMENT BIDIRECTIONAL RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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