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參數(shù)資料
| 型號： | TISP7125H3SL |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | OSC 3.3V SMT 7X5 CMOS |
| 中文描述： | 三重雙向可控硅過電壓保護器 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 283K |
| 代理商： | TISP7125H3SL |
TISP7070H3SLTHRUTISP7095H3SL,TISP7125H3SLTHRUTISP7210H3SL
TISP7250H3SLTHRUTISP7400H3SL
TRIPLEBIDIRECTIONALTHYRISTOROVERVOLTAGEPROTECTORS
MARCH 1999 - REVISED MARCH 2000
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
SYMBOL
VALUE
± 58
± 65
± 75
±100
±110
±120
±145
±160
±200
±230
±275
±300
UNIT
Repetitive peak off-state voltage, (see Note 1)
‘7070
‘7080
‘7095
‘7125
‘7135
‘7145
‘7180
‘7210
‘7250
‘7290
‘7350
‘7400
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, and 3)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
8/20 μs (IEC 61000-4-5, 1.2/50 μs voltage, 8/20 current combination wave generator)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 μs (FCC Part 68, 9/720 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I
TSP
A
500
350
250
225
200
200
200
130
100
I
TSM
55
60
0.9
400
A
di
T
/dt
T
J
T
stg
A/μs
°C
°C
-40 to +150
-65 to +150
NOTES: 1. Derate value at -0.13%/°C for temperatures below 25 °C.
2. Initially the TISP7xxxH3 must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to any terminal
pair. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal
return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the TISP7xxxH3
returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C
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| TISP7095H3SL | TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP7125H3SLS | 制造商:Bourns Inc 功能描述: |
| TISP7125H3SL-S | 功能描述:硅對稱二端開關(guān)元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP7135H3SL | 功能描述:硅對稱二端開關(guān)元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP7135H3SLS | 制造商:Bourns Inc 功能描述: |
| TISP7135H3SL-S | 功能描述:硅對稱二端開關(guān)元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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