參數(shù)資料
型號: TISP6NTP2B
廠商: Electronic Theatre Controls, Inc.
英文描述: QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
中文描述: 四具導電緩沖的P -門晶閘管
文件頁數(shù): 1/8頁
文件大小: 296K
代理商: TISP6NTP2B
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
SDRXAI
K1
K3
K4
K2
G3,G4
A
A
G1,G2
TISP6NTP2B
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
Device Symbol
Voltage Impulse
Form
Current Impulse
Shape
I
TSP
A
20
25
60
70
10/1000
μ
s
10/700
μ
s
1.2/50
μ
s
2/10
μ
s
10/1000
μ
s
5/310
μ
s
8/20
μ
s
2/10
μ
s
Overvoltage Protection for ISDN DC Feeds:
– Supply Voltages Down to -120 V
– Low 5 mA max. Gate Triggering Current
– High 150 mA min. (25
°
C) Holding Current
Rated for Common Impulse Waveforms
How To Order
D Package (Top View)
Description
The TISP6NTP2B has an array of four buffered P-gate forward
conducting thyristors with twin commoned gates and a common
anode connection. Each thyristor cathode has a separate
terminal connection. An antiparallel anode-cathode diode is
connected across each thyristor. The buffer transistors reduce
the gate supply current.
In use, the cathodes of an TISP6NTP2B thyristors are connected
to the four conductors to be protected (see Figure 2 and Figure
3). Each gate is connected to the appropriate negative voltage
feed. The anode of the TISP6NTP2B is connected to the system
common. The TISP6NTP2B is in an 8-pin small-outline surface
mount package.
Positive overvoltages are clipped to common by forward
conduction of the TISP6NTP2B antiparallel diode. In Figure 2, a
negative overvoltage draws a current through the 6.8
resistor
and the voltage developed triggers the thyristor on. In Figure 3,
negative overvoltages are initially clipped close to the negative
supply by emitter follower action of the TISP6NTP2B buffer
transistor. If sufficient clipping current flows, the TISP6NTP2B
thyristor will regenerate and switch into a low voltage on-state
condition. As the negative overvoltage subsides, the high
holding current of the TISP6NTP2B prevents d.c. latchup.
MDRXAM
1
2
3
4
5
6
7
8
K2
A
A
K4
G1,G2
K1
K3
G3,G4
.............................................. UL Recognized Component
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device
Package
Carrier
Tape and Reel
Tube
TISP6NTP2B D, Small-Outline
TISP6NTP2BDR
TISP6NTP2BD
TISP6NTP2BDR-S
TISP6NTP2BD-S
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
*RHAVALABE
VRSONS
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相關代理商/技術參數(shù)
參數(shù)描述
TISP6NTP2BD 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2BDR 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2BDR-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2BD-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2C 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TISP6NTP2C High Voltage Ringing SLIC Protector