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| 型號(hào)： | TISP6L7591 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過(guò)壓保護(hù) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | TISP6L7591 |
MAY 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
TISP6L7591 SLIC Protector
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak TIP or RING off-state voltage, V
(VS)(TIP)
= 0, V
(VS)(RING)
= 0
Repetitive peak V
S
voltage, V
TIP
= 0, V
RING
= 0
Non-repetitive peak pulse current (see Notes 1, 2 and 3)
V
(TIP)M
, V
(RING)M
V
(VS)M
-100
V
-80
V
I
PP
A
10/1000
μ
s (Bellcore GR-1089-CORE, open-circuit voltage wave shape 10/1000
μ
s)
5/320
μ
s (ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700
μ
s)
2/10
μ
s (Bellcore GR-1089-CORE, open-circuit voltage wave shape 2/10
μ
s)
30
40
80
Non-repetitive peak on-state current, 50 Hz to 60 Hz (see Notes 1, 2 and 3)
I
TSM
A
10 ms
5
1 s
3.5
Non-repetitive peak V
S
current, half sine wave 10 ms, cathodes commoned (see Note 1)
Operating free-air temperature range
I
(VS)M
T
A
T
stg
+2
A
-40 to +85
°
C
Storage temperature range
-40 to +125
°
C
NOTES: 1. Initially the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring
to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied
simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair).
3. Supply Voltage, V
S
, range -20 V to -80 V.
Test Conditions
Min
Typ
Max
Unit
V
F
V
FP
I
GT
I
H
V
T
V
SGL
Forward voltage
I
P
= 5 A, t
P
= 1 ms
I
PP
= 30 A, 10/1000
V
S
= -48 V
t
P
= 10 ms, V
S
= -48 V
d.c.
3
V
Peak forward voltage
15
V
Gate trigger current
0.2
15
mA
Holding current
-150
mA
Trip voltage
V
S
-2.8
-63
V
Dynamic trip voltage
I
PP
= -30 A, 10/1000, V
S
= -48 V
V
I
RG
Reverse gate current
V
S
= -75 V, V
TIP
= 0, V
RING
= 0
T
A
= 25
°
C
T
A
= 70
°
C
-5
μ
A
-50
μ
A
dv
R
/dt
Critical rate of voltage
rise
TIP or RING lead
±1000
V/
μ
s
V
ON
On-state voltage
I
T
= -0.5 A, t
P
= 1 ms
I
T
= -3.0 A, t
P
= 1 ms
-3
-4
V
I
R
Reverse current
(Gate open)
V
R
= -85 V, I
G
= 0
T
A
= 25
°
C
T
A
= 70
°
C
V
R
= -3 V
V
R
= -48 V
-5
μ
A
-50
μ
A
C
off
TIP or RING to GND
off-state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 4)
50
pF
40
pF
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
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