參數(shù)資料
型號(hào): TISP61089B
廠商: Electronic Theatre Controls, Inc.
英文描述: TISP61089B High Voltage Ringing SLIC Protector
中文描述: TISP61089B高壓振鈴用戶接口保護(hù)
文件頁(yè)數(shù): 3/22頁(yè)
文件大?。?/td> 411K
代理商: TISP61089B
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Recommended Operating Conditions
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Component
Min
Typ
Max
Unit
C
G
TISP61089B gate decoupling capacitor
100
220
nF
R
S
TISP61089B series resistor for GR-1089-CORE first-level surge survival
25
TISP61089B series resistor for GR-1089-CORE first-level and second-level surge survival
40
TISP61089B series resistor for GR-1089-CORE intra-building port surge survival
8
TISP61089B series resistor for K.20, K.21 and K.45 coordination with a 400 V primary
protector
10
Parameter
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= 25
°
C
T
J
= 85
°
C
-5
μ
A
μ
A
V
-50
V
(BO)
Breakover voltage
2/10
μ
s, I
TM
= -100 A, di/dt = -80 A/
μ
s, R
S
= 50
,
V
GG
= -100 V
2/10
μ
s, I
TM
= -100 A, di/dt = -80 A/
μ
s, R
S
= 50
,
V
GG
= -100 V,
(see Note 4)
-112
V
GK(BO)
Gate-cathode impulse
breakover voltage
12
V
V
F
Forward voltage
I
F
= 5 A, t
w
= 200
μ
s
3
V
V
FRM
Peak forward recovery
voltage
2/10
μ
s, I
F
= 100 A, di/dt = 80 A/
μ
s, R
S
= 50
,
(see Note 4)
10
V
I
H
Holding current
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -100 V
-150
mA
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
J
= 25
°
C
T
J
= 85
°
C
-5
μ
A
μ
A
mA
-50
I
GT
Gate trigger current
I
T
= -3 A, t
p(g)
20
μ
s, V
GG
= -100 V
5
V
GT
Gate-cathode trigger
voltage
I
T
= -3 A, t
p(g)
20
μ
s, V
GG
= -100 V
2.5
V
C
KA
Cathode-anode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 5)
V
D
= -3 V
V
D
= -48 V
100
pF
50
pF
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply
voltage value (V
GG
).
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to free air thermal resistance
T
A
= 25
°
C, EIA/JESD51-3 PCB, EIA/
JESD51-2 environment, P
TOT
= 1.7 W
120
°
C/W
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