參數(shù)資料
型號: TISP4XXXH3BJ
廠商: Bourns Inc.
英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 雙向可控硅過電壓保護器
文件頁數(shù): 4/15頁
文件大?。?/td> 367K
代理商: TISP4XXXH3BJ
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
TISP4xxxH3BJ Overvoltage Protector Series
Test Conditions
Min.
Typ.
Max.
±
5
±
10
±
70
±
80
±
95
±
115
±
125
±
145
±
165
±
180
±
200
±
220
±
240
±
250
±
265
±
290
±
300
±
350
±
395
±
400
±
78
±
88
±
103
±
124
±
134
±
154
±
174
±
189
±
210
±
230
±
250
±
261
±
276
±
301
±
311
±
362
±
408
±
413
±
0.6
±
3
±
0.6
Unit
I
DRM
V
D
= V
DRM
T
A
= 25
°
C
T
A
= 85
°
C
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
μ
A
V
(BO)
Breakover voltage
dv/dt =
±
750 V/ms,
R
SOURCE
= 300
V
V
(BO)
Impulse breakover
voltage
dv/dt
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
20 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±
750 V/ms,
I
T
=
±
5 A, t
W
= 100
μ
s
I
T
=
±
5 A, di/dt = - /+30 mA/ms
R
SOURCE
= 300
±
0.15
A
V
A
±
0.15
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±
5
kV/
μ
s
I
D
V
D
=
±
50 V
T
A
= 85
°
C
±
10
μ
A
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