參數(shù)資料
型號: TISP4350L3BJ
廠商: Power Innovations International, Inc.
英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 雙向可控硅過電壓保護器
文件頁數(shù): 2/14頁
文件大?。?/td> 223K
代理商: TISP4350L3BJ
TISP4070L3BJ, TISP4350L3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1999 — REVISED NOVEMBER 1999
2
P R O D U C T I N F O R M A T I O N
150 V rms a.c., giving a peak voltage of 269 V. The TISP4350L3BJ will not clip the B type ringing voltage as it
has a high impedance up to 275 V.
The TISP4070L3BJ should be connected after the hook switch to protect the following electronics. As the
TISP4070L3BJ has a high impedance up to 58 V, it will switch off after a surge and not be triggered by the
normal exchange battery voltage
These low (L) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend
leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult
the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series
is available.
absolute maximum ratings, T
A
= 25 °C (unless otherwise noted)
RATING
SYMBOL
VALUE
± 58
±275
UNIT
Repetitive peak off-state voltage,
‘4070
‘4350
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 1, and 2)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape, Type A)
5/310 μs (ITU-T K21, 10/700 μs voltage wave shape)
5/320 μs (FCC Part 68, 9/720 μs voltage wave shape, Type B)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape, Type A)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
I
TSP
A
50
40
40
30
I
TSM
12
13
2
120
A
Exponential current ramp, Maximum ramp value < 100 A
di
T
/dt
T
J
T
stg
A/μs
°C
°C
-40 to +150
-65 to +150
NOTES: 1. Initially the TISP4xxxL3BJ must be in thermal equilibrium with T
J
= 25 °C.
2. The surge may be repeated after the TISP4xxxL3BJ returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C
overload ratings, T
A
= 25 °C (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Peak overload on-state current, Type A impulse (see Note 4)
10/160 μs
10/560 μs
I
T(OV)M
3
00
1
5
0
A
Peak overload on-state current, a.c. power cross tests UL 1950 (see Note 4)
I
T(OV)M
See Figure 2
for current
versus time
A
NOTE
4: These electrical stress levels may damage the TIS4xxxL3BJ silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP4350L3BJR 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4350L3BJRS 制造商:Bourns Inc 功能描述:
TISP4350L3BJR-S 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4350L3LM 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4350L3LMR 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA