參數(shù)資料
型號(hào)： TISP4200H4BJ
廠商： Power Innovations International, Inc.
英文描述： BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述： 雙向可控硅過電壓保護(hù)器
文件頁數(shù)： 3/14頁
文件大小： 295K
代理商： TISP4200H4BJ
3
NOVEMBER 1997 - REVISED MARCH 1999
TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
electrical characteristics for the T and R terminals, T
A
= 25°C (unless otherwise noted)
PARAMETER
Repetitive peak off-
state current
TEST CONDITIONS
MIN
TYP
MAX
±5
±10
±165
±180
±200
±265
±300
±360
±174
±189
±210
±276
±311
±373
±0.8
±3
±0.8
UNIT
I
DRM
V
D
= ±V
DRM
T
A
= 25°C
T
A
= 85°C
‘4165
‘4180
‘4200
‘4265
‘4300
‘4360
‘4165
‘4180
‘4200
‘4265
‘4300
‘4360
μA
V
(BO)
Breakover voltage
dv/dt = ±750 V/ms,
R
SOURCE
= 300
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000 V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms,
I
T
= ±5 A, t
W
= 100 μs
I
T
= ±5 A, di/dt = +/-30 mA/ms
R
SOURCE
= 300
±0.15
A
V
A
±0.225
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5
kV/μs
I
D
V
D
= ±50 V
f = 100 kHz,
T
A
= 85°C
±10
90
84
79
67
74
62
35
28
33
26
μA
C
off
Off-state capacitance
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -100 V
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
‘4165 thru ‘4200
‘4265 thru ‘4360
80
70
71
60
65
55
30
24
28
22
pF
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 6)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
113
°C/W
50
NOTE
6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
相關(guān)PDF資料
PDF描述
TISP4265H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
TISP4125F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
TISP4150F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP4200H4BJR 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4200H4BJRS 制造商:Bourns Inc 功能描述:
TISP4200H4BJR-S 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4200H4BJ-S 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4200J1 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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