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參數(shù)資料
| 型號： | TISP4160LP |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| 中文描述： | 對稱瞬態(tài)電壓抑制器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 134K |
| 代理商： | TISP4160LP |
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings at
25°C
case temperature (unless otherwise noted)
RATING
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 μs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 μs)
5/200 μs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 μs)
0.2/310 μs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 μs)
5/310 μs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 μs)
Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2)
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Operating free - air temperature range
Storage temperature range
Lead temperature 1.5 mm from case for 10 s
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
NOTES: 4. These parameters must be measured using pulse techniques, t
w
= 100
μ
s, duty cycle
≤
2%.
5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
6. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum).
.
SYMBOL
VALUE
UNIT
I
TSP
A
100
50
38
38
2.5
250
150
0 to 70
-40 to +150
260
I
TSM
di
T
/dt
T
J
A rms
A/μs
°C
°C
°C
°C
T
stg
T
lead
electrical characteristics, T
J
= 25°C
PARAMETER
TEST CONDITIONS
TISP4160
TYP
TISP4180
TYP
UNIT
MIN
MAX
MIN
MAX
V
Z
Reference zener
voltage
Temperature coefficient
of reference voltage
Breakover voltage
Breakover current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state leakage
current
Off-state capacitance
I
Z
=
±
1mA
±
120
±
145
V
∝
V
Z
0.1
0.1
%/
o
C
V
(BO)
I
(BO)
V
TM
I
H
(see Notes 4 and 5)
(see Note 4)
I
T
=
±
5 A
(see Note 4)
±
160
±
0.6
±
3
±
180
±
0.6
±
3
V
A
V
±
0.15
±
0.15
(see Notes 4 and 5)
±
2.2
±
2.2
±
150
±
150
mA
dv/dt
(see Note 6)
±
5
±
5
kV/
μ
s
I
D
V
D
=
±
50 V
±
10
±
10
μ
A
C
off
V
D
= 0
f = 1 kHz
70
150
70
150
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
156
UNIT
°C/W
R
θ
JA
Junction to free air thermal resistance
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