參數(shù)資料
型號: TISP4125F3
廠商: Power Innovations International, Inc.
英文描述: SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
中文描述: 對稱瞬態(tài)電壓抑制器
文件頁數(shù): 2/12頁
文件大?。?/td> 326K
代理商: TISP4125F3
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
NOTE
4: Further details on capacitance are given in the Applications Information section.
RATING
SYMBOL
VALUE
± 100
± 120
± 145
UNIT
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘4125F3
‘4150F3
‘4180F3
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 μs (Gas tube differential transient, open-circuit voltage wave shape 1/2 μs)
2/10 μs (FCC Part 68, open-circuit voltage wave shape 2/10 μs)
8/20 μs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 μs)
10/160 μs (FCC Part 68, open-circuit voltage wave shape 10/160 μs)
5/200 μs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 μs)
0.2/310 μs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 μs)
5/310 μs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 μs)
5/310 μs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 μs)
10/560 μs (FCC Part 68, open-circuit voltage wave shape 10/560 μs)
10/1000 μs (REA PE-60, open-circuit voltage wave shape 10/1000 μs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1 s
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I
TSP
A
350
175
120
60
50
38
50
50
45
35
4
6
250
D Package
SL Package
I
TSM
A rms
di
T
/dt
T
J
T
stg
A/μs
°C
°C
-40 to +150
-40 to +150
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
TEST CONDITIONS
TISP4125F3
TISP4150F3
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
I
DRM
Repetitive peak off-
state current
Breakover voltage
Impulse breakover volt-
age
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
±10
±10
μA
V
(BO)
dv/dt = ±250 V/ms,
dv/dt = ±1000 V/μs,
di/dt < 20 A/μs
dv/dt = ±250 V/ms,
I
T
= ±5 A,
di/dt = +/-30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
R
SOURCE
= 300
R
SOURCE
= 50
,
±125
±150
V
V
(BO)
±143
±168
V
I
(BO)
V
T
I
H
R
SOURCE
= 300
±0.15
±0.6
±3
±0.15
±0.6
±3
A
V
A
t
W
= 100 μs
±0.15
±0.15
dv/dt
±5
±5
kV/μs
I
D
±10
95
50
25
±10
95
50
25
μA
pF
pF
pF
C
off
Off-state capacitance
f = 100 kHz,
(see Note 4)
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
55
30
15
55
30
15
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
TEST CONDITIONS
TISP4180F3
TYP
UNIT
MIN
MAX
I
DRM
Repetitive peak off-
state current
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
±10
μA
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