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參數(shù)資料
| 型號(hào)： | TISP3380F3 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| 中文描述： | 雙對(duì)稱瞬態(tài)電壓抑制器 |
| 文件頁(yè)數(shù)： | 11/17頁(yè) |
| 文件大?。?/td> | 457K |
| 代理商： | TISP3380F3 |
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11
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
protection voltage
The protection voltage, (V
(BO)
), increases under lightning surge conditions due to thyristor regeneration. This
increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V
(BO)
value under surge conditions can be estimated by multiplying the 50 Hz rate
V
(BO)
(250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 12.) . An estimate of the di/dt
can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the CCITT IX K17 1.5 kV, 10/700 μs surge has an average dv/dt of 150 V/μs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/μs. The instantaneous generator output
resistance is 25
. If the equipment has an additional series resistance of 20
, the total series resistance
becomes 45
. The maximum di/dt then can be estimated as 450/45 = 10 A/μs. In practice the
measured
di/
dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP is sensitive to junction temperature, T
J
, and the bias voltage, comprising
of the dc voltage, V
D
, and the ac voltage, V
d
. All the capacitance values in this data sheet are measured with
an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure17.
When V
D
>> V
d
the capacitance value is independent on the value of V
d
. The capacitance is essentially
constant over the range of normal telecommunication frequencies.
Figure 17.
APPLICATIONS INFORMATION
NORMALISED CAPACITANCE
vs
V
d
- RMS AC Test Voltage - mV
1
10
100
1000
N
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
AIXXAA
Normalised to V
d
= 100 mV
DC Bias, V
D
= 0
RMS AC TEST VOLTAGE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP3380F3DR | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3380F3DR-S | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3380F3P | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3380F3PS | 制造商:Bourns Inc 功能描述: |
| TISP3380F3P-S | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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