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參數(shù)資料
| 型號： | TISP3210H3SL |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙雙向可控硅過電壓保護器 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 231K |
| 代理商： | TISP3210H3SL |
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
SYMBOL
VALUE
± 58
± 65
± 75
±100
±110
±120
±145
±160
±190
±220
±275
UNIT
Repetitive peak off-state voltage, (see Note 1)
‘3070
‘3080
‘3095
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, 1.2/50 μs voltage, 8/20 current combination wave generator)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/200 μs (VDE 0433, 10/700 μs voltage wave shape)
0.2/310 μs (I3124, 0.5/700 μs voltage wave shape)
5/310 μs (ITU-T K20/21, 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 10/700 μs voltage wave shape)
5/320 μs (FCC Part 68, 9/720 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I
TSP
A
500
300
250
220
200
200
200
200
160
100
I
TSM
55
60
1
400
A
di
T
/dt
T
J
T
stg
A/μs
°C
°C
-40 to +150
-65 to +150
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarirty. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85 °C, derate linearly to zero at 150 °C lead temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simulateous operation. In this condition, the G terminal current will be 2xI
TSM(t)
, the sum of the R and T terminal currents. Derate
current values at -0.61 %/°C for ambient temperatures above 25 °C.
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| TISP3250H3SL | DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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| TISP3095H3SL | DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP3072F3 | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
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| TISP3219T3 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:Overvoltage Protector Series |
| TISP3219T3BJR | 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3219T3BJR-S | 功能描述:硅對稱二端開關(guān)元件 180V(DRM)250A(IPP)219V(BO) RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3240F3 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| TISP3240F3DR | 功能描述:硅對稱二端開關(guān)元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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