
11
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
protection voltage
The protection voltage, (V
(BO)
), increases under lightning surge conditions due to thyristor regeneration. This
increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V
(BO)
value under surge conditions can be estimated by multiplying the 50 Hz rate
V
(BO)
(250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 7.) . An estimate of the di/dt
can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the CCITT IX K17 1.5 kV, 10/700 μs surge has an average dv/dt of 150 V/μs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/μs. The instantaneous generator output
resistance is 25
. If the equipment has an additional series resistance of 20
, the total series resistance
becomes 45
. The maximum di/dt then can be estimated as 450/45 = 10 A/μs. In practice the
measured
di/
dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP is sensitive to junction temperature, T
J
, and the bias voltage, comprising
of the dc voltage, V
D
, and the ac voltage, V
d
. All the capacitance values in this data sheet are measured with
an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure 17.
When V
D
>> V
d
the capacitance value is independent on the value of V
d
. The capacitance is essentially
constant over the range of normal telecommunication frequencies.
Figure 17.
APPLICATIONS INFORMATION
NORMALISED CAPACITANCE
vs
V
d
- RMS AC Test Voltage - mV
1
10
100
1000
N
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
AIXXAA
Normalised to V
d
= 100 mV
DC Bias, V
D
= 0
RMS AC TEST VOLTAGE