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參數(shù)資料
| 型號(hào)： | TISP2380F3 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| 中文描述： | 雙對(duì)稱(chēng)瞬態(tài)電壓抑制器 |
| 文件頁(yè)數(shù)： | 3/18頁(yè) |
| 文件大?。?/td> | 609K |
| 代理商： | TISP2380F3 |
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3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
NOTES: 6
These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section
Typical value of the parameter, not a limit value.
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C
PARAMETER
TEST CONDITIONS
TISP2240F3
MIN
TISP2260F3
MIN
TISP2290F3
MIN
UNIT
MAX
MAX
MAX
I
DRM
Repetitive peak off-
state current
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
±10
±10
±10
μA
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Source Resistance = 300
dv/dt = ±1000 V/μs,
±240
±260
±290
V
V
(BO)
Impulse breakover volt-
age
di/dt < 20 A/μs
Source Resistance = 50
dv/dt = ±250 V/ms,
±267
±287
±317
V
I
(BO)
Breakover current
Source Resistance = 300
I
T
= ±5 A,
t
W
= 100 μs
di/dt = -/+30 mA/ms
Linear voltage ramp,
±0.15
±0.6
±0.15
±0.6
±0.15
±0.6
A
V
T
I
H
On-state voltage
Holding current
±3
±3
±3
V
A
±0.15
±0.15
±0.15
dv/dt
Critical rate of rise of
off-state voltage
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
V
d
= 100 mV
Third terminal voltage = 0
(see Notes 6 and 7)
±5
±5
±5
kV/μs
I
D
Off-state current
±10
90
35
15
±10
90
35
15
±10
90
35
15
μA
pF
pF
pF
C
off
Off-state capacitance
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
52
20
8
52
20
8
52
20
8
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
TEST CONDITIONS
TISP2320F3
MIN
TISP2380F3
MIN
UNIT
MAX
MAX
I
DRM
Repetitive peak off-
state current
Off-state current
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
±10
±10
μA
I
D
V
D
= ±50 V
f = 100 kHz,
±10
±10
μA
C
off
Off-state capacitance
V
d
= 100 mV
V
D
= 0,
Third terminal voltage = 0
(see Notes 4 and 5)
22
40
22
40
pF
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C
PARAMETER
TEST CONDITIONS
TISP2320F3
MIN
TISP2380F3
MIN
UNIT
MAX
MAX
I
DRM
Repetitive peak off-
state current
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
±10
±10
μA
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Source Resistance = 300
dv/dt = ±1000 V/μs,
±320
±380
V
V
(BO)
Impulse breakover volt-
age
di/dt < 20 A/μs
Source Resistance = 50
±347
±407
V
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| TISP2380F3DR | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP2380F3DRS | 制造商:Bourns Inc 功能描述: |
| TISP2380F3DR-S | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP2380F3P | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP2380F3PS | 制造商:Bourns Inc 功能描述: |
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