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參數(shù)資料
| 型號： | TIPP32C |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PNP SILICON POWER TRANSISTORS |
| 中文描述： | 進步黨硅功率晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 88K |
| 代理商： | TIPP32C |
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1989 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
20 W Pulsed Power Dissipation
G
100 V Capability
G
2 A Continuous Collector Current
G
4 A Peak Collector Current
G
Customer-Specified Selections Available
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
3. V
CE
= 20 V, I
C
= 1 A, t
p
= 10 ms, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32
TIPP32A
TIPP32B
TIPP32C
V
CBO
-40
-60
-80
-100
-40
-60
-80
-100
-5
-2
-4
-1
0.8
20
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
T
T
j
T
stg
T
L
V
A
A
A
W
W
°C
°C
°C
-55 to +150
-55 to +150
260
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