參數(shù)資料
型號(hào)： TIPL760A
廠商： Power Innovations International, Inc.
英文描述： NPN SILICON POWER TRANSISTORS
中文描述： NPN硅功率晶體管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 161K
代理商： TIPL760A
TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
CEO(sus)
Collector-emitter
sustaining voltage
I
C
= 10 mA
L = 25 mH
(see Note 2)
TIPL760
TIPL760A
TIPL760
TIPL760A
TIPL760
TIPL760A
TIPL760
TIPL760A
400
450
V
I
CES
Collector-emitter
cut-off current
V
CE
= 850 V
V
CE
= 1000 V
V
CE
= 850 V
V
CE
= 1000 V
V
CE
= 400 V
V
CE
= 450 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
T
C
= 100°C
T
C
= 100°C
50
50
200
200
50
50
μA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
μA
I
EBO
V
EB
= 10 V
I
C
= 0
1
mA
h
FE
V
CE
= 5 V
I
C
= 0.5 A
(see Notes 3 and 4)
20
60
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.5 A
I
B
= 0.8 A
I
B
= 0.8 A
I
B
= 0.5 A
I
B
= 0.8 A
I
B
= 0.8 A
I
C
= 2.5 A
I
C
= 4 A
I
C
= 4 A
I
C
= 2.5 A
I
C
= 4 A
I
C
= 4 A
(see Notes 3 and 4)
T
C
= 100°C
1.0
2.5
5.0
1.2
1.4
1.3
V
V
BE(sat)
Base-emitter
saturation voltage
(see Notes 3 and 4)
T
C
= 100°C
V
f
t
Current gain
bandwidth product
Output capacitance
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
12
MHz
C
ob
V
CB
= 20 V
I
E
= 0
f = 0.1 MHz
110
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
Junction to case thermal resistance
1.56
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
sv
t
rv
t
fi
t
ti
t
xo
t
sv
t
rv
t
fi
t
ti
t
xo
Voltage storage time
Voltage rise time
Current fall time
Current tail time
Cross over time
Voltage storage time
Voltage rise time
Current fall time
Current tail time
Cross over time
I
C
= 4 A
V
BE(off)
= -5 V
I
B(on)
= 0.8 A
(see Figures 1 and 2)
2.5
300
250
150
400
3
500
250
150
750
μs
ns
ns
ns
ns
μs
ns
ns
ns
ns
I
C
= 4 A
V
BE(off)
= -5 V
I
B(on)
= 0.8 A
T
C
= 100°C
(see Figures 1 and 2)
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