
3
JULY 1968 - REVISED MARCH 1997
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1
1·0
10
100
h
F
1
10
100
1000
TCS635AA
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 μs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
I
B
- Base Current - A
0·001
0·01
0·1
1·0
10
100
V
C
0·01
0·1
1·0
TCS635AB
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1
1·0
10
100
V
B
0·6
0·8
1·0
1·2
1·4
1·6
1·8
2·0
TCS635AC
V
CE
= 4 V
T
C
= 25°C