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參數(shù)資料
| 型號(hào)： | TIP32B |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistors(互補(bǔ)型，塑料功率晶體管) |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 81K |
| 代理商： | TIP32B |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 10
1
Publication Order Number:
TIP31A/D
TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
CollectorEmitter Saturation Voltage
V
CE(sat)
= 1.2 Vdc (Max) @ I
C
= 3.0 Adc
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 40 Vdc (Min) TIP31, TIP32
= 60 Vdc (Min) TIP31A, TIP32A
= 80 Vdc (Min) TIP31B, TIP32B
= 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product
f
T
= 3.0 MHz (Min) @ I
C
= 500 mAdc
Compact TO220 AB Package
PbFree Packages are Available*
MAXIMUM RATINGS
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. I
C
= 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100
TIP31B, TIP32B
TIP31A, TIP32A
TIP31C, TIP32C
CEO
80
60
100
5.0
+150
EmitterBase Voltage
V
EB
C
Vdc
Base Current
Total Power Dissipation
C
I
P
1.0
Adc
@ T
A
= 25 C
Temperature Range
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
406080100 VOLTS,
40 WATTS
http://onsemi.com
123
4
TIP3xx
xx
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
PbFree Package
A
Y
WW
G
TIP3xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP31C | Complementary Silicon Plastic Power Transistors(互補(bǔ)型硅塑料功率晶體管) |
| TIP31B | Complementary Silicon Plastic Power Transistors(互補(bǔ)型，塑料功率晶體管) |
| TIP32C | Complementary Silicon Plastic Power Transistors(互補(bǔ)型，塑料功率晶體管) |
| TIP33 | NPN SILICON POWER TRANSISTORS |
| TIP33A | NPN SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP32-B | 功能描述:兩極晶體管 - BJT 3.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP32B-BP | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:Silicon PNP Power Transistors |
| TIP32BG | 功能描述:兩極晶體管 - BJT 3A 80V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP32-BP | 功能描述:兩極晶體管 - BJT 3.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP32B-S | 功能描述:兩極晶體管 - BJT 80V 3A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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