參數(shù)資料
型號: TIP31E
廠商: Power Innovations International, Inc.
英文描述: NPN SILICON POWER TRANSISTORS
中文描述: NPN硅功率晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 99K
代理商: TIP31E
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
V
CE
= 160 V
V
CE
= 180 V
V
CE
= 200 V
I
B
= 0
TIP31D
TIP31E
TIP31F
TIP31D
TIP31E
TIP31F
120
140
160
V
I
CES
Collector-emitter
cut-off current
V
BE
= 0
V
BE
= 0
V
BE
= 0
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 90 V
I
B
= 0
0.3
mA
I
EBO
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 3 A
(see Notes 5 and 6)
25
5
V
CE(sat)
I
B
= 750 mA
I
C
= 3 A
(see Notes 5 and 6)
2.5
V
V
BE
V
CE
= 4 V
I
C
= 3 A
(see Notes 5 and 6)
1.8
V
h
fe
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
3.125
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
t
off
Turn-on time
Turn-off time
I
C
= 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30
I
B(off)
= -0.1 A
t
p
= 20 μs, dc
2%
0.5
2
μs
μs
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