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參數(shù)資料
| 型號： | TIP140 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Complementary Silicon Power Transistors(互補硅功率達(dá)林頓晶體管) |
| 中文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | TIP140 |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 5
1
Publication Order Number:
TIP140/D
TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for generalpurpose amplifier and low frequency
switching applications.
Features
High DC Current Gain
Min h
FE
= 1000 @ I
C
= 5.0 A, V
CE
= 4 V
CollectorEmitter Sustaining Voltage @ 30 mA
V
CEO(sus)
= 60 Vdc (Min) TIP140, TIP145
= 80 Vdc (Min) TIP141, TIP146
= 100 Vdc (Min) TIP142, TIP147
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector Emitter Voltage
V
CEO
60
80
100
Vdc
Collector Base Voltage
V
CB
60
80
100
Vdc
Emitter Base Voltage
V
EB
5.0
Vdc
Collector Current
Continuous
Peak (Note 1)
I
C
10
15
Adc
Base Current Continuous
I
B
0.5
Adc
Total Power Dissipation
@ T
C
= 25 C
P
D
125
W
Operating and Storage
Junction Temperature Range
T
J
, T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
R
JC
1.0
°
C/W
Thermal Resistance,
JunctiontoAmbient
R
JA
35.7
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. 5 ms,
10% Duty Cycle.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT93 (TO218)
CASE 340D
STYLE 1
MARKING DIAGRAM
A
Y
WW
TIP14x
x
G
= Assembly Location
= Year
= Work Week
= Device Code
= 0, 1, 2, 5, 6, or 7
= PbFree Package
AYWWG
TIP14x
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP140 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP141T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP140T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP142T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP146T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP140 | 制造商:Bourns Inc 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP140_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| TIP140F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:TO-3P Fully Isolated Plastic Package Transistor CDIL |
| TIP140FTU | 功能描述:達(dá)林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP140G | 功能描述:達(dá)林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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