參數(shù)資料
型號: TIP125
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: Medium Power Linear Switching Applications
中文描述: 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 49K
代理商: TIP125
1
) Tested with pulses t
= 300 μs, duty cycle
2% – Gemessen mit Impulsen t
p
= 300 μs, Schaltverhltnis
2%
2
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
2
Darlington Transistors
TIP125, TIP126, TIP127
Characteristics (T
j
= 25°C)
Kennwerte (T
j
= 25°C)
Typ.
Min.
Max.
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
Collector saturation voltage – Kollektor-Sttigungsspg.
1
)
- I
EB0
2 mA
- I
C
= 3 A, - I
B
= 12 mA
- I
C
= 5 A, - I
B
= 20 mA
Base-Emitter on-voltage – Basis-Emitter-Spannung
1
)
- V
CEsat
- V
CEsat
2 V
4 V
- I
C
= 3 A, - V
CE
= 3 V
DC current gain – Kollektor-Basis-Stromverhltnis
1
)
- V
BEon
2.5 V
- V
CE
= 3 V, - I
C
= 0.5 A
- V
CE
= 3 V, - I
C
= 3 A
Small signal current gain – Kleinsignal-Stromverstrkung
h
FE
h
FE
1000
1000
- V
CE
= 4 V, - I
C
= 3 A, f = 1 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
h
fe
4
- V
CB
= 10 V, I
E
= i
e
= 0, f = 100 kHz
Thermal resistance – Wrmewiderstand
C
CB0
200 pF
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehuse
R
thA
R
thC
62.5 K/W
2
)
2 K/W
Admissible torque for mounting
Zulssiges Anzugsdrehmoment
M 4
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
TIP120, TIP121, TIP122
Equivalent Circuit – Ersatzschaltbild
B1
C2
E2
T1
T2
相關PDF資料
PDF描述
TIP126 Medium Power Linear Switching Applications
TIP125 Si-Epitaxial PlanarTransistors
TIP125A Si-Epitaxial PlanarTransistors
TIP125 POWER TRANSISTORS(5.0A,60-100V,65W)
TIP126 POWER TRANSISTORS(5.0A,60-100V,65W)
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