參數(shù)資料
型號: TIP105
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: PNP Epitaxial Silicon Darlington Transistor(Monolithic Construction With Built In Base-Emitter Shunt Resistor)(PNP硅外延達(dá)林頓晶體管(內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)))
中文描述: 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 98K
代理商: TIP105
2000 Fairchild Semiconductor International
Rev. B, February 2000
T
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage : TIP105
: TIP106
: TIP107
V
CEO
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
Value
- 60
- 80
- 100
- 60
- 80
- 100
- 5
- 8
- 15
- 1
2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
Min.
Max.
Units
: TIP105
: TIP106
: TIP107
I
C
= -30mA, I
B
= 0
-60
-80
-100
V
V
V
I
CEO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
V
CE
= -30V, I
B
= 0
V
CE
= -40V, I
B
= 0
V
CE
= -50V, I
B
= 0
-50
-50
-50
μ
A
μ
A
μ
A
I
CBO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
V
BE
= -5V, I
C
= 0
V
CE
= -4V, I
C
= -3A
V
CE
= -4V, I
C
= -8A
I
C
= -3A, I
B
= -6mA
I
C
= -8A, I
B
= -80mA
V
CE
= -4V, I
C
= -8A
V
CB
= -10V, I
E
= 0, f = 0.1MHz
-50
-50
-50
-2
20000
μ
A
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
1000
200
V
CE
(sat)
Collector-Emitter Saturation Voltage
-2
-2.5
-2.8
300
V
V
V
pF
V
BE
(on)
C
ob
Base-Emitter ON Voltage
Output Capacitance
TIP105/106/107
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : h
FE
=1000 @ V
CE
= -4v, I
C
= -3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP100/101/102
1.Base 2.Collector 3.Emitter
TO-220
1
Equivalent Circuit
B
E
C
R1
R2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIP105 制造商:Fairchild Semiconductor Corporation 功能描述:DARLINGTON BIPOLAR TRANSISTOR ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:DARLINGTON TRANSISTOR, PNP, -60V, TO-220
TIP105_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:PNP SILICON POWER DARLINGTON TRANSISTOR
TIP105-BP 制造商:Micro Commercial Components (MCC) 功能描述:PNP PLASTIC MEDIUM-POWER SILICON TRANSISTORS
TIP105G 功能描述:達(dá)林頓晶體管 8A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
TIP105-S 功能描述:達(dá)林頓晶體管 PNP DARLINGTON 60V 8A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel