參數(shù)資料
型號: TIP100
廠商: 意法半導(dǎo)體
英文描述: Complementary Silicon Power Darlington Transistors(互補硅功率達(dá)林頓晶體管)
中文描述: 互補硅功率達(dá)林頓晶體管(互補硅功率達(dá)林頓晶體管)
文件頁數(shù): 2/4頁
文件大?。?/td> 44K
代理商: TIP100
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
for
TIP100/TIP105
for
TIP106
for
TIP102/TIP107
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
50
50
50
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
I
CBO
Collector Cut-off
Current (I
E
= 0)
for
TIP100/TIP105
for
TIP106
for
TIP102/TIP107
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
50
50
50
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EB
= -5 V
8
mA
I
C
= 30 mA
for
TIP100/TIP105
for TIP106
for TIP102/TIP107
60
80
100
V
V
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 3 A
I
C
= 8 A
I
B
= 6 mA
I
B
= 80 mA
2
2.5
V
V
V
BE
*
Base-Emitter Voltage
I
C
= 8 A
V
CE
= 4 V
2.8
V
h
FE
*
DC Current Gain
I
C
= 3 A
I
C
= 8 A
V
CE
= 4 V
V
CE
= 4 V
1000
200
20000
V
F
*
Forward Voltage of
Commutation Diode
(I
B
= 0)
I
F
= - I
C
= 10 A
2.8
V
* For PNP types voltage and current values are negative.
Safe OperatingArea
TIP100/TIP102/TIP105/TIP106/TIP107
2/4
相關(guān)PDF資料
PDF描述
TIP105 Complementary Silicon Power Darlington Transistors(互補硅功率達(dá)林頓晶體管)
TIP106 Complementary Silicon Power Darlington Transistors(互補硅功率達(dá)林頓晶體管)
TIP131 Complemetary Silicon Power Darlington Transistors(互補硅功率達(dá)林頓晶體管)
TIP137 Complemetary Silicon Power Darlington Transistors(互補硅功率達(dá)林頓晶體管)
TIP33C Complemetary Silicon Power Transistors(互補硅功率晶體管)
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