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參數(shù)資料
| 型號(hào)： | TIM7785-35SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | TIM7785-35SL |
2
T IM7785-35S L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
V
DS
V
15
Gate-Source Voltage
V
GS
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
I
DS
A
26
P
T
W
°
C
°
C
115
T
ch
175
Storage
PACKAGE OUTLINE (2-16G1B)
T
stg
-65 to +175
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5
0
0.7
±
0.15
2
±
0
8
±
0
1
±
0
0
+
-
0
2
2
1
±
0
2
±
0
20.4
±
0.3
24.5 MAX.
4
–
C1.0
16.4 MAX.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM7785-35SL_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| TIM7785-45SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,125W - Trays |
| TIM7785-45UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,23W - Trays |
| TIM7785-4SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,23W - Trays |
| TIM7785-4UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,23W - Trays |
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