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參數(shù)資料
| 型號： | TIM0910-5 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE SEMICONDUCTOR TECHNICAL DATA |
| 中文描述： | 微波半導體技術數(shù)據(jù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 341K |
| 代理商： | TIM0910-5 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM0910-5
TECHNICAL DATA
FEAT URES
n
HIGH POWER
P1dB=37.5dBm at 9.5GHz to 10.5GHz
n
HIGH GAIN
G1dB=7.0dB at 9.5GHz to 10.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
n
BROAD BAND INTERNALLY MATCHED
n
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
Channel Temperature Rise
SYMBOL
P
1dB
CONDITIONS
UNIT
dBm
MIN. TYP. MAX.
37.0
37.5
G
1dB
dB
6.0
7.0
I
DS1
G
η
add
Tch
A
dB
%
°
C
2.0
25
2.5
±
0.8
80
VDS= 9V
f= 9.5 to 10.5GHz
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150
W
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 2.4A
V
GSoff
V
DS
=
3V
I
DS
= 72mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -72
μ
A
UNIT
mS
MIN. TYP. MAX.
1500
Pinch-off Voltage
V
-1.5
-3.0
-4.5
Saturated Drain Current
A
5.0
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
3.0
3.7
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
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