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參數(shù)資料
| 型號： | TIC30A |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | General purpose Amplifier and Switching Applications |
| 中文描述： | 通用放大器和開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 26K |
| 代理商： | TIC30A |
Emitter-base voltage (open collector)
Collector current
Collector current (Peak)
Base current
Total power dissipation upto T
C
=25°C
Derate above 25°C
Total power dissipation upto T
A
=25°C
Derate above 25°C
Junction temperature
Storage temperature
V
EBO
I
C
I
CM
I
B
P
tot
max.
max.
max.
max.
max.
max.
max.
max.
max.
5.0
1.0
3.0
0.4
30
0.24
2
0.016
150
–65 to +150
V
A
A
A
W
W
°
C
W
W
°
C
°C
oC
P
tot
T
j
T
stg
THERMAL RESISTANCE
From junction to ambient
From junction to case
R
th j–a
R
th j–c
62.5
4.167
°
C/W
°
C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
29
30
29A
30A
29B
30B
29C
30C
Collector cutoff current
I
B
= 0; V
CE
= 30V
I
B
= 0; V
CE
= 60V
V
EB
= 0; V
CE
= V
CEO
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 30 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 1 A; I
B
= 125 mA
Base emitter on voltage
I
C
= 1 A; V
CE
= 4 V
D.C. current gain
I
C
= 0.2 A; V
CE
= 4 V
I
C
= 1 A; V
CE
= 4 V
I
CEO
I
CEO
I
CES
max. 0.3
max.
max.
0.3
–
–
–
mA
mA
mA
–
0.3
0.3
0.2
I
EBO
max.
1.0
mA
V
CEO(sus)
* min.
V
CBO
V
EBO
40
40
60
60
80
80
100
100
V
V
V
min.
min.
5.0
V
CEsat
*
max.
0.7
V
V
BE(on)
*
max.
1.3
V
h
FE
*
h
FE
*
min.
40
min.
max.
15
75
Small-signal current gain
I
C
= 0.2A; V
CE
= 10V; f = 1 KHz
Transition frequency
I
C
= 0.2A; V
CE
= 10V; f = 1 MHz
h
fe
min.
20
f
T
(2)
min.
3
MHz
*Pulse test: pulse width
≤
300 μs; duty cycle
≤
2%.
(2) f
T
= |h
fe
| f
test
.
TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
http://www.bocasemi.com page: 2
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