參數(shù)資料
型號： TIC206S
廠商： Power Innovations International, Inc.
英文描述： SILICON TRIACS
中文描述： 硅雙向可控硅
文件頁數(shù)： 1/5頁
文件大?。?/td> 95K
代理商： TIC206S
TIC206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Sensitive Gate Triacs
G
4 A RMS
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 5 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
SYMBOL
VALUE
400
600
700
800
4
25
30
±0.2
1.3
0.3
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC206D
TIC206M
TIC206S
TIC206N
V
DRM
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
≤
200
μ
s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
A
A
A
A
W
W
°C
°C
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110°C
±1
mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
t
p(g)
> 20
μ
s
0.5
-1.5
-2
3.6
0.7
-0.7
-0.8
0.8
5
-5
-5
10
2
-2
-2
2
mA
V
GTM
Peak gate trigger
voltage
V
All voltages are with respect to Main Terminal 1.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIC206S-S 功能描述:雙向可控硅 700V 4A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
TIC216 制造商:TI 制造商全稱:Texas Instruments 功能描述:SILICON TRIACS
TIC216A 制造商:TI 制造商全稱:Texas Instruments 功能描述:SILICON TRIACS
TIC216A_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON TRIACS
TIC216B 制造商:TI 制造商全稱:Texas Instruments 功能描述:SILICON TRIACS
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