- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361448 > TIC126M (Power Innovations International, Inc.) SILICON CONTROLLED RECTIFIERS PDF資料下載
參數(shù)資料
| 型號(hào)： | TIC126M |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | TIC126M |
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
APRIL 1971 - REVISED JUNE 2000
Copyright 2000, Power Innovations Limited, UK
G
12 A Continuous On-State Current
G
100 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 20 mA
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
SYMBOL
VALUE
400
600
700
800
400
600
700
800
12
UNIT
Repetitive peak off-state voltage
TIC126D
TIC126M
TIC126S
TIC126N
TIC126D
TIC126M
TIC126S
TIC126N
V
DRM
V
Repetitive peak reverse voltage
V
RRM
V
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width
≤
300
μ
s)
Peak gate power dissipation (pulse width
≤
300
μ
s)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
A
I
T(AV)
7.5
A
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
100
3
5
1
A
A
W
W
°C
°C
°C
-40 to +110
-40 to +125
230
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIC126N | SILICON CONTROLLED RECTIFIERS |
| TIC126S | SILICON CONTROLLED RECTIFIERS |
| TIC201M | SILICON TRIACS |
| TIC201N | SILICON TRIACS |
| TIC201S | SILICON TRIACS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIC126M | 制造商:Bourns Inc 功能描述:THYRISTOR 12A 600V TO-220 |
| TIC126M-S | 功能描述:SCR 600V 12A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TIC126N | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON CONTROLLED RECTIFIERS |
| TIC126N-S | 功能描述:SCR 800V 12A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TIC126S | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。