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參數(shù)資料
| 型號(hào)： | TIC116 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | TIC116 |
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
NOTE
5: This parameter must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
T
C
= 110°C
2
mA
I
RRM
V
R
= rated V
RRM
I
G
= 0
T
C
= 110°C
2
mA
I
GT
V
AA
= 12 V
V
AA
= 12 V
t
p(g)
≥
20 μs
V
AA
= 12 V
t
p(g)
≥
20 μs
V
AA
= 12 V
t
p(g)
≥
20 μs
V
AA
= 12 V
Initiating I
T
= 100 mA
V
AA
= 12 V
Initiating I
T
= 100 mA
R
L
= 100
R
L
= 100
t
p(g)
≥
20
μ
s
T
C
= - 40°C
8
20
mA
V
GT
Gate trigger voltage
2.5
V
R
L
= 100
0.8
1.5
R
L
= 100
T
C
= 110°C
0.2
I
H
Holding current
T
C
= - 40°C
100
mA
40
V
T
On-state
voltage
Critical rate of rise of
off-state voltage
I
T
= 8 A
(see Note 5)
1.7
V
dv/dt
V
D
= rated V
D
I
G
= 0
T
C
= 110°C
400
V/μs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
3
°C/W
°C/W
62.5
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| TIC116B | 制造商:Texas Instruments 功能描述: |
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