參數(shù)資料
型號: TIC106F
廠商: Texas Instruments, Inc.
英文描述: PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
中文描述: 進(jìn)步黨硅反向阻斷三極晶閘管
文件頁數(shù): 3/8頁
文件大?。?/td> 165K
代理商: TIC106F
3
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Gate-controlled turn-on time
Figure 2. Circuit-commutated turn-off time
G
R
G
V
A
30 V
I
T
V
G
I
G
DUT
6
V
A
V
G
10%
90%
t
gt
PMC1AA
G1
R
G
V
A
30 V
I
A
6
V
G1
I
G
DUT
G2
R
G
V
G2
TH1
R2
R1
0.1
μ
F
to 0.5
μ
F
G2 t
P
Synchronisation
I
G
V
(I
RM
Monitor)
0.1
NOTES: A. Resistor R1 is adjusted for the specified value
of I
.
B. Resistor R2 value is 30/I
, where I
is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
t
= 50 μs to 300 μs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, V
G
, of
20 V and duration of
10 μs to 20 μs.
V
G1
V
G2
I
A
V
A
I
T
I
RM
t
q
V
T
0
0
t
P
PMC1AB
相關(guān)PDF資料
PDF描述
TIC106M PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106D SILICON CONTROLLED RECTIFIERS
TIC106M SILICON CONTROLLED RECTIFIERS
TIC106N SILICON CONTROLLED RECTIFIERS
TIC106S SILICON CONTROLLED RECTIFIERS
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參數(shù)描述
TIC106M 制造商:Bourns Inc 功能描述:SCR 600V 5A
TIC106M-S 功能描述:SCR 600V 5A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TIC106N 制造商:Bourns Inc 功能描述:THYRISTOR 5A 800V TO-220
TIC106N 制造商:Bourns Inc 功能描述:THYRISTOR 5A 800V TO-220
TIC106NS 制造商:Bourns Inc 功能描述: