參數(shù)資料
型號: TIC106D
廠商: Texas Instruments, Inc.
英文描述: PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
中文描述: 進步黨硅反向阻斷三極晶閘管
文件頁數(shù): 3/8頁
文件大?。?/td> 165K
代理商: TIC106D
3
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Gate-controlled turn-on time
Figure 2. Circuit-commutated turn-off time
G
R
G
V
A
30 V
I
T
V
G
I
G
DUT
6
V
A
V
G
10%
90%
t
gt
PMC1AA
G1
R
G
V
A
30 V
I
A
6
V
G1
I
G
DUT
G2
R
G
V
G2
TH1
R2
R1
0.1
μ
F
to 0.5
μ
F
G2 t
P
Synchronisation
I
G
V
(I
RM
Monitor)
0.1
NOTES: A. Resistor R1 is adjusted for the specified value
of I
.
B. Resistor R2 value is 30/I
, where I
is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
t
= 50 μs to 300 μs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, V
G
, of
20 V and duration of
10 μs to 20 μs.
V
G1
V
G2
I
A
V
A
I
T
I
RM
t
q
V
T
0
0
t
P
PMC1AB
相關(guān)PDF資料
PDF描述
TIC106E PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106F PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106M PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106D SILICON CONTROLLED RECTIFIERS
TIC106M SILICON CONTROLLED RECTIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIC106DS 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:SILICON CONTROLLED RECTIFIERS
TIC106D-S 功能描述:SCR 400V 5A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TIC106DSS 制造商:Bourns Inc 功能描述:
TIC106E 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106F 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS