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參數(shù)資料
| 型號(hào)： | TIC106C |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| 中文描述： | 進(jìn)步黨硅反向阻斷三極晶閘管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 165K |
| 代理商： | TIC106C |
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTE
6: This parameter must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
R
GK
= 1 k
T
C
= 110°C
400
μ
A
I
RRM
V
R
= rated V
RRM
I
G
= 0
T
C
= 110°C
1
mA
I
GT
V
AA
= 6 V
V
AA
= 6 V
t
p(g)
≥
20 μs
V
AA
= 6 V
t
p(g)
≥
20 μs
V
AA
= 6 V
t
p(g)
≥
20 μs
V
AA
= 6 V
Initiating I
T
= 10 mA
V
AA
= 6 V
Initiating I
T
= 10 mA
R
L
= 100
R
L
= 100
R
GK
= 1 k
R
L
= 100
R
GK
= 1 k
R
L
= 100
R
GK
= 1 k
R
GK
= 1 k
t
p(g)
≥
20
μ
s
T
C
= - 40°C
60
200
μ
A
V
GT
Gate trigger voltage
1.2
V
0.4
0.6
1
T
C
= 110°C
0.2
I
H
Holding current
T
C
= - 40°C
8
mA
R
GK
= 1 k
5
V
TM
Peak on-state
voltage
Critical rate of rise of
off-state voltage
I
TM
= 5 A
(See Note 6)
1.7
V
dv/dt
V
D
= rated V
D
R
GK
= 1 k
T
C
= 110°C
10
V/μs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
3.5
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
gt
Gate-controlled
turn-on time
Circuit-commutated
turn-off time
I
T
= 5 A
I
G
= 10 mA
See Figure 1
1.75
μs
t
q
I
T
= 5 A
I
RM
= 8 A
I
G
= 10 mA
See Figure 2
7.7
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIC106D | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106E | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106F | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106M | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106D | SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIC106D | 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106DS | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:SILICON CONTROLLED RECTIFIERS |
| TIC106D-S | 功能描述:SCR 400V 5A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TIC106DSS | 制造商:Bourns Inc 功能描述: |
| TIC106E | 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
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