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參數(shù)資料
| 型號： | TIC106 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| 中文描述： | 進(jìn)步黨硅反向阻斷三極晶閘管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 165K |
| 代理商： | TIC106 |
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
APRIL 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
5 A Continuous On-State Current
G
30 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 200 μA
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC106D
TIC106M
TIC106S
TIC106N
TIC106D
TIC106M
TIC106S
TIC106N
V
DRM
400
600
700
800
400
600
700
800
5
V
Repetitive peak reverse voltage
V
RRM
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width
≤
300
μ
s)
Peak gate power dissipation (pulse width
≤
300
μ
s)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
A
I
T(AV)
3.2
A
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
30
0.2
1.3
0.3
A
A
W
W
°C
°C
°C
-40 to +110
-40 to +125
230
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIC106A | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106B | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106C | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106D | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106E | PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIC106A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106A_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS |
| TIC106B | 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
| TIC106C | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS |
| TIC106D | 制造商:TI 制造商全稱:Texas Instruments 功能描述:PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS |
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