參數(shù)資料
型號： THS3110EVM
廠商： Texas Instruments, Inc.
英文描述： THS3110 Evalutation Module(THS3110評估板)
中文描述： THS3110 Evalutation模塊（THS3110評估板）
文件頁數(shù)： 17/27頁
文件大?。?/td> 880K
代理商： THS3110EVM
www.ti.com
0
10
20
30
40
50
60
10
100
C
L
- Capacitive Load - pF
R
Gain = 5,
R
L
= 100
,
V
S
=
±
15 V
I
_
+
V
S
-V
S
49.9
806
5.11
1
μ
F
200
V
S
100
LOAD
R
ISO
_
+
V
S
-V
S
49.9
5.11
1
μ
F
200
V
S
27 pF
806
R
F
R
G
750
100
LOAD
R
IN
_
+
V
S
-V
S
49.9
806
Ferrite Bead
1
μ
F
200
V
S
100
LOAD
THS3110, THS3111
SLOS422A–SEPTEMBER 2003–REVISED NOVEMBER 2003
Driving Capacitive Loads
Placing a small series resistor, R
ISO
, between the
amplifier’s output and the capacitive load, as shown
in Figure 56, is an easy way of isolating the load
capacitance.
Applications, such as FET drivers and line drivers can
be highly capacitive and cause stability problems for
high-speed amplifiers.
Using a ferrite chip in place of R
ISO
, as shown in
Figure 57, is another approach of isolating the output
of the amplifier. The ferrite’s impedance characteristic
versus frequency is useful to maintain the low fre-
quency load independence of the amplifier while
isolating the phase shift caused by the capacitance at
high frequency. Use a ferrite with similar impedance
to R
ISO
, 20
- 50
, at 100 MHz and low impedance
at dc.
Figure 55 through Figure 61 show recommended
methods for driving capacitive loads. The basic idea
is to use a resistor or ferrite chip to isolate the phase
shift at high frequency caused by the capacitive load
from the amplifier’s feedback path. See Figure 55 for
recommended resistor values versus capacitive load.
Figure 58 shows another method used to maintain
the low frequency load independence of the amplifier
while isolating the phase shift caused by the capaci-
tance at high frequency. At low frequency, feedback
is mainly from the load side of R
ISO
. At high fre-
quency, the feedback is mainly via the 27-pF capaci-
tor. The resistor R
IN
in series with the negative input
is used to stabilize the amplifier and should be equal
to the recommended value of R
F
at unity gain.
Replacing R
IN
with a ferrite of similar impedance at
about 100 MHz as shown in Figure 59 gives similar
results with reduced dc offset and low frequency
noise. (See the
ADDITIONAL REFERENCE MA-
TERIAL
section for expanding the usability of cur-
rent-feedback amplifiers.)
Figure 55. Recommended R
ISO
vs Capacitive Load
Figure 56.
Figure 58.
Figure 57.
17
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THS3110IDGNR 功能描述:高速運算放大器 Sngl Lo-Noise Hi-Vlt Current-Feedback RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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