參數(shù)資料
型號(hào): THN6501Z
廠商: Tachyonics CO,. LTD.
英文描述: NPN SiGe RF TRANSISTOR
中文描述: npn型硅鍺射頻晶體管
文件頁(yè)數(shù): 1/15頁(yè)
文件大?。?/td> 242K
代理商: THN6501Z
THN6501 Series
Application
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.0 dB Typ. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
o High Power Gain
MAG = 15 dB Typ. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
o High Transition Frequency
f
T
= 9 GHz Typ. @ V
CE
= 3 V, I
C
= 30 mA
Pin Configuration
Pin No
1
2
3
Product
THN6501S
THN6501U
THN6501Z
THN6501E
h
FE
Classification
Marking
Absolute Maximum Ratings
Caution : ESD sensitive device
V
CBO
V
CEO
V
EBO
I
C
100
150
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
P
T
T
STG
T
J
150
-65 ~ 150
2.0
1.25, 1.0t
1.6
0.8, 0.8t
Package
SOT23
SOT323
Dimension
2.9
1.3, 1.2t
2.0
1.25, 1.0t
SOT343
SOT523
E
C
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
AB2
h
FE
125 to 300 80 to 160
AB1
Unit
mA
mW
V
V
V
20
12
2.5
Symbol
Ratings
Emitter
Collector
Available Package
Description
Base
Symbol
B
Unit : mm
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/15 -
Aug.-2005
Rev 2.0
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