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參數(shù)資料
| 型號： | THN6301U |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN Planer RF TRANSISTOR |
| 中文描述： | npn型刨射頻晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 104K |
| 代理商： | THN6301U |
THN6301U
Electrical Characteristics
( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
300
V
CE
=8V, Ic=5mA,f=1GHz
Output 3rd Intercept
CONDITION
Insertion Power Gain
V
CE
=8V, Ic=5mA,f=1GHz
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=15mA,f=1GHz
f
T
C
CB
Noise Resistance
Associated Gain
Minimum Noise Figure
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, Ic = 15mA
V
CE
= 8V, Ic = 15mA
V
CB
= 10V, f = 1MHz
0.55
100
10
GHz
n A
n A
rn
Maximum Stable Gain
[S21]
2
MSG
V
CE
=8V, Ic=5mA,f=1GHz
V
CE
=8V, Ic=5mA,f=1GHz
NFmin
VALUE
Unit
20
12
25
14
V
V
G
A
OIP
3
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=5mA,f=1GHz
13.5
16
11.5
dB
17
1.1
0.055
14.5
15
27
dBm
PARAMETER
CONDITION
SYMBOL
PARAMETER
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
100
100
200
VALUE
dB
dB
dB
pF
Unit
www.tachyonics.co.kr
- 2/10 -
Sep-2003
Rev 1.1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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