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參數(shù)資料
| 型號(hào)： | THN6201U |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 261K |
| 代理商： | THN6201U |
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THN6201 series
□
Applications
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
o High Power Gain
MAG = 18.5 dB Typ. @ f = 1 GHz, V
CE
= 3 V, I
C
= 15 mA
13 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 15 mA
o High Transition Frequency
f
T
= 12 GHz Typ. @ V
CE
= 3 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
□
Available Package
Product
THN6201S
THN6201U
THN6201Z
THN6201E
THN6201KF
□
h
FE
Classification
Marking
h
FE
Value 125 to 300
□
Absolute Maximum Ratings
Caution : ESD sensitive device
V
2.5
35
mA
mW
12
Collector
C
SOT623F
V
V
20
Package
SOT23
Dimension
2.9
ⅹ
1.3, 1.2t
Description
Emitter
Base
Ratings
E
1.4
ⅹ
0.8, 0.6t
Unit : mm
SOT323 2.0
ⅹ
1.25, 1.0t
SOT343 2.0
ⅹ
1.25, 1.0t
SOT523
1.6
ⅹ
0.8, 0.8t
Symbol
B
Unit
AC1
AC2
80 to 160
Total Power Dissipation
Storage Temperature
℃
150
-65 ~ 150
150
℃
Collector Current (DC)
T
J
I
C
P
T
T
STG
Operating Junction Temperature
V
CEO
V
EBO
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Parameter
Symbol
V
CBO
Collector to Base Breakdown Voltage
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/13 -
Aug.-2005
Rev 2.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| THN6201Z | NPN SiGe RF TRANSISTOR |
| THN6301 | NPN SiGe RF TRANSISTOR |
| THN6301E | NPN SiGe RF TRANSISTOR |
| THN6301KF | NPN SiGe RF TRANSISTOR |
| THN6301Z | NPN SiGe RF TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THN6201Z | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6301 | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SiGe RF TRANSISTOR |
| THN6301E | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6301KF | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6301S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Planer RF TRANSISTOR |
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