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參數資料
| 型號： | THN5601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 100K |
| 代理商： | THN5601B |
THN5601B
The THN5601B is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-223 SMD package.
The THN5601B can be used as a driver device or
an output device, depending on the specific app-
lication.
□
FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=900MHz
o Power gain 8.5 dB @f=900MHz
PIN CONFIGURATION
PIN NO
1
2
3
4
□
APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 900 MHz
communication band.
□
MAXIMUM RATINGS
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Open Emitter
Open Base
Open Collector
Ts = 60
℃
; note 1
SYMBOL
E
B
E
C
DESCRIPTION
emitter
base
emitter
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
℃
20
8
3
350
1
V
mA
W
℃
collector
-65 ~ 150
150
V
V
NPN SiGe RF POWER
TRANSISTOR
www.tachyonics.co.kr
- 1/7 -
Mar-22-2005
Rev 1.2
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| THN5702F | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
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| THN6201E | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
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