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參數(shù)資料
| 型號(hào)： | THM1001TE |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | SiGe HBT MMIC POWER AMPLIFIER |
| 中文描述： | 硅鍺HBT MMIC功率放大器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 147K |
| 代理商： | THM1001TE |
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Seoul, Korea. 153
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8,
Gasan
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Kumchun
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023
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http://
www.tachyonics.co.kr
Rev. 1.1
THM1001TE
SiGe HBT MMIC
POWER AMPLIFIER
Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is
designed for 2.4GHz wireless applications including Bluetooth
tm
Class 1 wireless
technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output
power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier
output and antenna.
The silicon-germanium structure of the THM1001TE, and its exposed-die-pad
package, soldered to the system PCB, provide high thermal conductivity and a
subsequently low junction temperature.
Features
+23 dBm at 44% Power Added Efficiency
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP8 Plastic Package
E_PAD MSOP8
Applications
Bluetooth
tm
Wireless Technology (Class 1)
USB Dongles, modules
PCMCIA, Flash cards
Access Points
2.4GHz cordless telephone
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