參數(shù)資料
型號: THD215
廠商: 意法半導體
英文描述: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 高壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 65K
代理商: THD215
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
2.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
CE
= 700 V
10
I
CES
V
CE
= 1500 V
10
μ
A
I
EBO
V
EB
= 5 V
100
μ
A
I
C
= 100 mA
700
V
I
C
= 6 A
I
B
= 1.2 A
1.3
V
I
C
= 6 A
I
B
= 1.2 A
1.3
V
I
C
= 10 mA
I
C
= 6 A
I
C
= 6 A
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
T
j
= 125
o
C
10
6
4
13
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 4.5 A
I
B1
= 1.5 A
V
ceflyback
= 1100 sin
f = 64 KHz
I
B2
= -2.4 A
510
6
π
t
V
3.3
160
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingArea
Thermal Impedance
THD215HI
2/6
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