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參數(shù)資料
| 型號(hào)： | TH7899M |
| 廠商： | ATMEL CORP |
| 元件分類： | 圖像傳感器 |
| 英文描述： | Full Field CCDImage Sensor 2048 x 20Pixels48 |
| 中文描述： | IMAGE SENSOR-CCD, 2048(H) X 2048(V) PIXEL, 10.5V, SQUARE, THROUGH HOLE MOUNT |
| 文件頁數(shù)： | 6/24頁 |
| 文件大?。?/td> | 1378K |
| 代理商： | TH7899M |
6
TH7899M
2201A–IMAGE–02/02
OutputAmplifiers
TheTH7899Msensorhasfouroutputamplifiers.Thesearelocatedineachcornerof
thedeviceattheendsofthereadoutregister.Chargepacketsareclockedtoapre-
chargecapacitor(floatingdiffusion)whosepotentialvarieslinearlywiththequantityof
chargeineachpacket.Thispotentialisappliedtotheinputgateofatwostagesource
followeramplifierandtheoutputsignalisread.Then,theresetclock
Φ
Rremovesthe
chargefromthefloatingdiffusionviatheresetdrainVDRwhichimposesitsreference
level.
Figure5.
On-chipOutputAmplifierStructure
Multi-Pinned-Phase
(MPP)Mode
TheTH7899MsensoroperatesintheMPPmodeinordertosubstantiallydecreasedark
current(typicallyfrom0.6nA/cm
2
to25pA/cm
2
at25°C).Comparedtostandardtechnol-
ogy,theMPPmodeallows,whilekeepingallotherperformancesunchanged,eitherto
increaseexposuretime,ortooperateathighertemperature.
DarkcurrentisduetothermalgenerationinthesubstrateoftheCCD.Thedifferentgen-
erationsourcesareasfollows:
surfacestatesattheSi-SiO
2
interfacewhichisthemaincontribution
generationanddiffusioninthebulk
generationinthedepletedzone
Ifthegatesarebiasedwithadequatenegativebiases,holesappearattheSi-SiO
2
inter-
faceandfillintheinterfacestatessuppressingtheirdarkcurrentcontribution.Asa
result,onlytheminorbulkanddepletedzonecontributionsremain.
AbsoluteMaximumRatings*
Storagetemperature..................................... -55°Cto+150°C
Operatingtemperature ................................... -40°Cto+85°C
Temperaturecycling...................................................15°C/mn
*NOTICE:
StressesabovethoselistedunderABSOLUTE
MAXIMUMRATINGSmaycausepermanent
devicefailure.Functionallyatorabovetheselim-
itsisnotimplied.Exposuretoabsolutemaximum
ratingsforextendedperiodsmayaffectreliability.
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