參數(shù)資料
型號: TH7888AVRHRB
廠商: ATMEL CORP
元件分類: 圖像傳感器
英文描述: Area Array CCD Image Sensor (1024 x 1024 Pixels with Antiblooming)
中文描述: IMAGE SENSOR-CCD, 2.60V, RECTANGULAR, THROUGH HOLE MOUNT
封裝: PGA-40
文件頁數(shù): 14/21頁
文件大?。?/td> 354K
代理商: TH7888AVRHRB
14
TH7888A
1999A–IMAGE–09/03
Electro-optical
Performance
General conditions:
Temp = 25°C (package temperature)
Light source: 2854 K with 2 mm BG38 filter (unless specified) + F/3.5 optical
aperture.
30 images per second mode (Ti = 33 ms) under typical operating conditions
Readout mode: 2 outputs
Values exclude dummy elements and blemishes
Notes:
1. Pixel saturation (full well) as a function of vertical transfer frequency (see Figure 14 on page 15) and antiblooming adjust-
ment (see Figure 15 on page 15).
2. After substraction of dark signal slope due to memory readout time.
3. First line level referenced from inactive prescan elements (12 samples).
4. Last line level referenced from inactive prescan elements (12 samples).
5. Measured with Correlated Double Sampling (CDS) including 160 μV readout noise and dark current noise in general test
conditions.
6. Saturation to RMS noise in darkness ratio.
7. At Nyquist frequency.
8. VSAT/2 measurement and 417 kHz vertical transfer frequency.
9. VSAT/2 measurement and 10 MHz horizontal transfer frequency.
Table 7.
Performance Description and Values
Parameter
Symbol
Value
Unit
Remarks
Min
Typ
Max
Output register saturation level
V
SAT
reg
2.6
V
Pixel saturation level
V
SAT
1.6
1.9
3
V
(1)
Pixel saturation charge (electron per pixel)
Q
SAT
320
ke-
Responsivity at 640 nm
Responsivity with BG38 filter
R
3
6.5
4
V/(μJ/cm
2
)
V/(μJ/cm
2
)
Quantum efficiency at 640 nm
QE
15
%
See Figure 17
Photo response non uniformity (1
σ
)
PRNU
0.4
1.7
%Vos
Dark signal non uniformity (1
σ
)
DSNU
0.28
0.4
mV
(2)
Average dark signal
V
DS
2
3
mV
(3)
4
5.6
mV
(4)
Temporal RMS noise in darkness (last line)
V
N
200
μV
(5)
Dynamic range
D
80
dB
(6)
Horizontal modulation transfer function at 500
nm
MTF
70
%
(7)
Vertical charge transfer inefficiency (per
stage)
VCTI
2.5.10
-5
(8)
Horizontal charge transfer inefficiency (per
stage)
HCTI
5.10
-5
(9)
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