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參數(shù)資料
| 型號： | TH50VSF3680 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 0.4W, 75V, 0.3A, SIGNAL DIODE, SOD123 |
| 中文描述： | SRAM和閃存混合多芯片封裝 |
| 文件頁數(shù)： | 18/55頁 |
| 文件大小： | 585K |
| 代理商： | TH50VSF3680 |
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TH50VSF3680/3681AASB
2001-03-06 18/55
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RANGE
UNIT
V
CC
V
CCs
/V
CCf
Supply Voltage
Input Voltage
(1)
0.3~4.2
V
V
IN
0.3~4.2
V
V
DQ
Input/Output Voltage
0.5~V
CC
+
0.5 (
≤
4.2)
V
T
opr
Operating Temperature
20~85
°
C
P
D
Power Dissipation
0.6
W
T
solder
Soldering Temperature (10 s)
260
°
C
I
OSHORT
Output Short Circuit Current
(2)
100
mA
N
EW
Erase/Program Cycling Capability
100,000
Cycle
T
stg
Storage Temperature
55~125
°
C
(1)
2.0 V for pulse width
≤
20 ns
(2) Output shorted for no more than one second. No more than one output shorted at a time
HARDWARE STATUS FLAGS
STATUS
DQ7
DQ6
DQ5
DQ3
DQ2
BY
/
RY
Auto Programming
7
DQ
Toggle
0
0
1
0
Read in Program Suspend
(1)
Data
Data
Data
Data
Data
Hi-Z
Selected
(2)
0
Toggle
0
0
Toggle
0
Erase Hold Time
Non-Selected
(3)
0
Toggle
0
0
1
0
Selected
0
Toggle
0
1
Toggle
0
In Auto-
Erase
Auto-Erase
Non-Selected
0
Toggle
0
1
1
0
Selected
1
1
0
0
Toggle
Hi-Z
Read
Non-Selected
Data
Data
Data
Data
Data
Hi-Z
Selected
7
DQ
Toggle
0
0
Toggle
0
In Progress
In Erase
Suspend
Programming
Non-Selected
7
DQ
Toggle
0
0
1
0
Auto Programming
7
DQ
Toggle
1
0
1
0
Auto-Erase
0
Toggle
1
1
N/A
0
Time Limit
Exceeded
Programming in Erase Suspend
7
DQ
Toggle
1
0
N/A
0
Notes: DQ outputs cell data and
DQ0 and DQ1 pins are reserved for futyre use.
DQ0, DQ1 and DQ4 output 0.
(1) Data output from an address to which Write is being performed are undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
During Auto Chip Erase, all blocks are selected.
(3) Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is
read from there.
BY
/
RY
to high impedence when the operation has completed.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TH50VSF3681AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH510100000 | 制造商:JOHNSON ELECTRIC 功能描述:LIGHT PUSHBUTTON SWITCHES, 5 AMPS, 250VAC, RECTANGULAR MAINTAINED SWITCH |
| TH510108000 | 制造商:Johnson Electric / Saia-Burgess 功能描述:S.P. LATCHING SWITCH |
| TH510208000 | 制造商:Johnson Electric / Saia-Burgess 功能描述:D.P. LATCHING SWITCH |
| TH511000000 | 制造商:Johnson Electric / Saia-Burgess 功能描述:Rectangular latching pushbutton switch |
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