參數(shù)資料
型號(hào): TGL4203-EPU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: 50 GHz Wideband Analog Attenuator
中文描述: 0 MHz - 50000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX
封裝: 1.70 X 0.80 MM, 0.10 MM HEIGHT, DIE-7
文件頁數(shù): 10/10頁
文件大?。?/td> 367K
代理商: TGL4203-EPU
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 18, 2005
TGL4203-EPU
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
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