參數(shù)資料
型號： TGA1088-EPU
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 衰減器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV06; No. of Contacts:3; Connector Shell Size:9; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述： 23000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： 4.115 X 3.047 MM, DIE-11
文件頁數(shù)： 1/4頁
文件大小： 263K
代理商： TGA1088-EPU
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
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23 - 29 GHz High Power Amplifier TGA1088-EPU
Key Features and Performance
0.25um pHEMT Technology
23 GHz - 29 GHz Frequency Range
Nominal 1 Watt (28GHz) @ P1dB
Nominal Gain of 23 dB
OTOI 38 dBm typical (
Linear Mode
)
Bias 7V @ 400 mA Idq (
Sat Power mode)
Bias 7V @ 650 mA Idq (
Linear mode)
Chip Dimensions 4.115mm x 3.047mm
Primary Applications
LMDS
Point-to-Point Radio
The TriQuint TGA188-EPU is a three stage
HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
point-to-point digital radio, LMDS/LMCS and
Ka-band satellite spacecraft and ground terminals.
The three stage design consists of a 400 um input
device driving a pair of 600 um interstage devices
followed by four 600 um output devices. The device
is identical to TriQuint’s TGA9070 with the exception
of additional bias circuitry that allows the flexibility to
operate in two different modes. The high saturated
power mode will give identical performance to the
TGA9070. The high linearity mode will provide 2-3dB
improvement in OTOI performance over the TGA9070.
The TGA1088 provides greater than 1W of
output power across 23-29 GHz with a typical
PAE of 35%. Typical small signal gain is 23 dB.
The device may be biased for either high saturated
power or high linearity via bond wire jumpers.
The TGA188 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
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Frequency (GHz)
G
TGA 1088 Typical Small Signal Gain
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Frequency (GHz)
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TGA 1088 Typical Saturated Output Power
Biased in High Saturated Power Mode
相關(guān)PDF資料
PDF描述
TGA1088 23 - 29 GHz High Power Amplifier
TGA1135B 18-27.5 GHz 1W Power Amplifier
TGA1141 33-36 GHz 2W Power Amplifier
TGA1172 27 - 32 GHz 1W Power Amplifier
TGA1307 Ka Band Low Noise Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TGA1135B 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:18-27.5 GHz 1W Power Amplifier
TGA1135B-SCC 功能描述:射頻放大器 18-27GHz K Band HPA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
TGA1141 功能描述:射頻放大器 33-36GHz 6Volts P1dB 31dBm RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
TGA1141-EPU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:33-36 GHz 2W Power Amplifier
TGA1152-SCC 功能描述:射頻放大器 13.5-15.5 GHz HPA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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